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Defect Reconfiguration through Surface Functionalization by Galvanic Peeling Treatment for Reliable and Robust

I Sak Lee1, Kunho Moon1, Jong Bin An1

  • 1Department of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.

ACS Applied Materials & Interfaces
|January 7, 2026
PubMed
Summary
This summary is machine-generated.

Galvanic peeling treatment (GPT) enhances amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) by reconfiguring defects. This process improves electrical characteristics and device reliability, significantly reducing variations and degradation under stress.

Keywords:
GalvanicHydrogenMetal-oxide semiconductorsThin-film transistorsa-IGZO

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Device Engineering

Background:

  • Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) are crucial for display technologies.
  • Defects in a-IGZO films lead to poor device performance and reliability.
  • Existing methods for defect control often induce unwanted crystallization or phase separation.

Purpose of the Study:

  • To introduce a novel Galvanic Peeling Treatment (GPT) for a-IGZO TFTs.
  • To achieve selective defect reconfiguration without detrimental structural changes.
  • To enhance the electrical properties and operational stability of a-IGZO TFTs.

Main Methods:

  • A Galvanic Peeling Treatment (GPT) process was developed for a-IGZO thin films.
  • The process utilizes electron-driven cleavage of weak metal-oxygen bonds (e.g., Zn-OH).
  • Densification of the oxide thin-film network and reinforcement of In-O coordination were achieved.

Main Results:

  • GPT treatment improved field-effect mobility from 8.4 to 13.1 cm²/V·s.
  • Subthreshold swing was reduced from 0.28 to 0.24 V/dec.
  • Film density increased from 6.5 to 7.2 g/cm³, reducing device-to-device variation and improving reliability.
  • Threshold voltage shift under stress conditions (CiS, NBTiS) was significantly reduced.

Conclusions:

  • GPT is an effective method for defect reconfiguration in a-IGZO TFTs.
  • The treatment enhances structural robustness, leading to superior electrical characteristics.
  • GPT-treated TFTs exhibit markedly improved stability and reliability compared to pristine devices.