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Hf/Zr Superlattice-Based High-κ Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS.

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New Hf/Zr-based gate stacks achieve subnanometer equivalent oxide thickness (EOT) and enable multi-threshold voltage (Vth) designs. These advanced gate dielectrics are compatible with high-temperature processing and maintain high device reliability for future logic scaling.

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Area of Science:

  • Materials Science
  • Semiconductor Device Physics
  • Nanotechnology

Background:

  • Advanced logic transistors require gate dielectrics with subnanometer equivalent oxide thickness (EOT), suppressed leakage, and compatibility with high-temperature processing.
  • Conventional high-κ dielectric systems face challenges in simultaneously meeting EOT scaling, multi-threshold voltage (Vth) tunability, and high device reliability requirements.
  • Achieving these stringent requirements is crucial for continued scaling of semiconductor devices beyond the 1 nm frontier.

Purpose of the Study:

  • To demonstrate Hf/Zr-based gate stacks that satisfy key requirements for advanced logic transistors, including subnanometer EOT, leakage suppression, and process compatibility.
  • To investigate the impact of embedding an Al2O3 dipole within Hf/Zr multilayers on threshold voltage (Vth) tunability and equivalent oxide thickness (EOT).
  • To evaluate the device reliability and stability of the novel gate dielectric stacks under stress conditions.

Main Methods:

  • Fabrication and characterization of Hf/Zr-based superlattice gate stacks, including HZH and HZHA (with embedded Al2O3 dipole).
  • High-temperature annealing (700 °C N2) to assess thermal stability and EOT.
  • Electrical characterization to measure leakage current, equivalent oxide thickness (EOT), flat-band voltage (VFB) shift, and threshold voltage (Vth) tunability.
  • Reliability testing using negative-bias temperature stress (NBTS) at 125 °C.

Main Results:

  • The HZH superlattice achieved an EOT of 7.3 Å after a 700 °C anneal, outperforming conventional HfO2-only stacks (8.5 Å) while maintaining comparable leakage.
  • The HZHA stack demonstrated an 8.4 Å EOT and a >200 mV VFB shift, enabling multi-Vth tuning without compromising scaling, surpassing standard HfO2/Al2O3 stacks (9.0 Å EOT).
  • HZHA and HA stacks exhibited comparable VFB drifts (87 mV and 97 mV, respectively) under NBTS, confirming high device reliability alongside Vth tunability and low EOT.

Conclusions:

  • Hf/Zr-based gate stacks, particularly HZHA, quantitatively satisfy the critical requirements for advanced logic transistors, including subnanometer EOT, RMG-compatible processing, and Vth tunability.
  • The study provides new physical insights into dipole behavior and interfacial diffusion in ultrathin Hf/Zr multilayers, advancing the understanding of dielectric scaling.
  • HZHA represents a promising dielectric platform for supporting logic scaling beyond the 1 nm node, offering a pathway to next-generation high-performance transistors.