Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

773
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
773
P-N junction01:11

P-N junction

1.1K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.1K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

548
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
548
Types of Semiconductors01:20

Types of Semiconductors

1.3K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.3K
Schottky Barrier Diode01:27

Schottky Barrier Diode

924
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
924
Biasing of P-N Junction01:16

Biasing of P-N Junction

1.8K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.8K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Extended Dual Antiplatelet Therapy for Multivessel Coronary Artery Disease.

The New England journal of medicine·2026
Same author

High-density lipoprotein cholesterol levels and prognosis in non-ischemic dilated cardiomyopathy.

Frontiers in endocrinology·2026
Same author

Enterococcus faecalis NBRC 100481 Protects the Intestinal Barrier via α-catenin/HMP-1 in Caenorhabditis elegans.

Probiotics and antimicrobial proteins·2026
Same author

Radiation-free Assessment of Scoliosis: A Reliability and Validity Study for Ultrasound Angles.

Global spine journal·2026
Same author

A magnetic-acoustic dual-fesponsive nanoplatform for targeted PPARδ activation attenuates adolescent idiopathic scoliosis progression.

Journal of nanobiotechnology·2026
Same author

A 0D/3D nanoreactor integrating quantum dots and ZIF-67 for efficient urea electrosynthesis with substrate enrichment and coupling.

Chemical communications (Cambridge, England)·2026

Related Experiment Video

Updated: Jan 13, 2026

Developing High Performance GaP/Si Heterojunction Solar Cells
10:31

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

7.9K

Violet Arsenic Phosphorus: Switching p-Type into High Performance n-Type Semiconductor by Arsenic Substitution.

Rui Zhai1, Zhuorui Wen1, Xuewen Zhao2

  • 1State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, People's Republic of China.

Nano-Micro Letters
|January 11, 2026
PubMed
Summary

Violet arsenic phosphorus, a novel semiconductor, exhibits high electron mobility, outperforming violet phosphorus. This discovery offers potential for advanced field-effect transistors and complementary metal-oxide-semiconductor applications.

Keywords:
Arsenic substitutionField effect transistorHigh mobilityViolet phosphorusn-type semiconductor

More Related Videos

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

8.1K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.2K

Related Experiment Videos

Last Updated: Jan 13, 2026

Developing High Performance GaP/Si Heterojunction Solar Cells
10:31

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

7.9K
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

8.1K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.2K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Semiconductor Research

Background:

  • Violet phosphorus is a layered elemental semiconductor with notable photoelectric and mechanical properties.
  • It exhibits high hole mobility, making it a material of interest for electronic applications.

Purpose of the Study:

  • To synthesize violet arsenic phosphorus for the first time.
  • To investigate the structural and electronic properties of this new material.
  • To explore its potential for field-effect transistors (FETs).

Main Methods:

  • Synthesis of violet arsenic phosphorus using a molten lead method.
  • Crystal structure determination via single-crystal X-ray diffraction.
  • Characterization of electronic properties, including band structure and carrier mobility, using field-effect transistor measurements.

Main Results:

  • Violet arsenic phosphorus (P83.4As0.6) was successfully synthesized with a crystal structure similar to violet phosphorus.
  • Arsenic substitution tuned the band structure, converting the p-type semiconductor to a high-performance n-type material.
  • Significantly reduced effective electron mass and extremely high electron mobility (2622.503 cm²/V·s) were observed.
  • FETs fabricated from violet arsenic phosphorus nanosheets demonstrated high electron mobility (137.06 cm²/V·s) under ambient conditions, surpassing violet phosphorene.

Conclusions:

  • Violet arsenic phosphorus is a promising new material for electronic applications.
  • Arsenic substitution is an effective strategy for tuning the electronic properties of phosphorus-based semiconductors.
  • This research opens avenues for designing advanced phosphorus-based materials for FETs and complementary metal-oxide-semiconductor (CMOS) technologies.