Related Experiment Video
Updated: Jan 15, 2026

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
Published on: August 15, 2018
Intercalation-mediated activation and enhancement of ferroelectricity in transition metal dichalcogenide
Dong-Hui Xu1, Shuangli Yue1, Li Zhang1
1Institute of Atomic and Molecular Physics, Key Laboratory of High Energy Density Physics of Ministry of Education, Sichuan University, Chengdu 610065, China. wangx@scu.edu.cn.
Abstract:
Ferroelectricity (FE) in two-dimensional (2D) materials holds considerable promise for ultrathin, low-power memory and logic applications, but its advancement remains limited by the scarcity of high-performance candidates and the generally weak out-of-plane polarization (OOP). Here, we demonstrate that metal intercalation provides a general and experimentally feasible strategy to activate and enhance sliding FE in transition metal dichalcogenide (TMD) heterobilayers. Through high-throughput calculations on 5264 pristine and intercalated configurations, systematically derived from accessible TMD monolayers and nine representative non-magnetic metal intercalants (Cu, Ag, Au, Pt, Zn, Cd, Hg, Ga, and In), we identify 234 intercalated systems with switchable OOP, including 190 that exceed the experimentally reported value for the MoS2/WS2 system, with some achieving OOP values up to 37× higher. This represents a 13-fold increase over pristine counterparts. Notably, Pt intercalation exhibits the most pronounced effect, delivering the strongest enhancement of OOP. To enable efficient exploration of this vast configuration space, we further introduce a crystal equivariant graph neural network that accurately predicts OOP directly from atomic structures (R2 = 0.98), including both its magnitude and reversible directionality, thereby bypassing the need for computationally intensive DFT calculations. Together, these results elucidate the mechanistic role of interfacial intercalation in tuning symmetry breaking and interlayer coupling, and establish a scalable, machine learning-accelerated framework for the discovery of next-generation 2D sliding ferroelectrics with enhanced functional performance and broad technological relevance.
More Related Videos
08:00Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
Published on: March 27, 2018
10:40A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Related Concept Videos
Crystal Field Theory - Octahedral Complexes
To explain the observed behavior of transition metal complexes (such as colors), a model involving electrostatic interactions between the electrons from the ligands and the electrons in the unhybridized d orbitals of the central metal atom has been developed. This electrostatic model is crystal field theory (CFT). It helps to understand, interpret, and predict the colors, magnetic behavior, and some structures of coordination compounds of transition metals.
CFT focuses on...
Valence Bond Theory
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Crystal Field Theory - Tetrahedral and Square Planar Complexes
Crystal field theory (CFT) is applicable to molecules in geometries other than octahedral. In octahedral complexes, the lobes of the dx2−y2 and dz2 orbitals point directly at the ligands. For tetrahedral complexes, the d orbitals remain in place, but with only four ligands located between the axes. None of the orbitals points directly at the tetrahedral ligands. However, the dx2−y2 and dz2 orbitals (along the Cartesian axes) overlap with the ligands less than the dxy,...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...