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Optical Imaging of the Interlayer Sliding in Two-Dimensional 1T'-ReS2
Jun Fu1,2,3, Ting Hu4, Xinran Zhang1,2,3
1International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China.
None:
The relative atomic-scale motion between layers in van der Waals layered materials offers a new route to realizing two-dimensional ferroelectricity. However, directly measuring the extent of interlayer sliding remains challenging. Here, we use wide-field second-harmonic generation (SHG) imaging to quantitatively map interlayer sliding in few-layer 1T'-ReS2, a model platform enabled by centrosymmetry in each monolayer and weak coupling between layers. We discover multiple discrete stacking configurations in the trilayer and four-layer samples, manifested as characteristic SHG intensity values. Corroborated by Raman and photoluminescence (PL) spectroscopy, we demonstrate that these states arise from anisotropy-confined translational interlayer sliding along the b-axis, which also subtly modulates the electronic structure by ∼5 meV. Our results present the quantitative optical imaging of discrete interlayer sliding in 1T'-ReS2, offering direct evidence to understand and manipulate two-dimensional sliding ferroelectricity.
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