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This study reveals unique electronic states at the nickel oxide/nickel interface during oxidation. It highlights coupled atom migration and NiO decomposition under specific conditions.

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Area of Science:

  • Materials Science
  • Surface Science
  • Solid-State Chemistry

Background:

  • Understanding the electronic properties of interfaces is crucial for materials development.
  • The nickel oxide/nickel (NiO/Ni) interface is relevant in catalysis and electronics.
  • Oxidation processes significantly alter material properties at the atomic level.

Purpose of the Study:

  • To investigate the electronic surface states at the buried NiO/Ni interface.
  • To elucidate the mechanism of nickel oxidation and interface formation.
  • To examine the stability of NiO at high temperatures under vacuum.

Main Methods:

  • Layer-by-layer oxidation of a Ni(111) single crystal.
  • In situ X-ray photoelectron spectroscopy (XPS).
  • Synchrotron radiation X-ray absorption spectroscopy (XAS).

Main Results:

  • Multiple electronic surface states were observed below one monolayer NiO thickness.
  • Coupled migration of Ni atoms and oxygen penetration occurred during oxidation.
  • Partial decomposition of NiO was detected at high temperatures under ultrahigh vacuum.

Conclusions:

  • The initial oxidation stage of Ni(111) involves distinct interface electronic states.
  • The oxidation mechanism is characterized by simultaneous atomic and oxygen transport.
  • NiO exhibits partial decomposition at high temperatures, influencing the interface structure.