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High-Temperature Oxidation Behavior of Ti-Doped SiOC Ceramics
Xiumei Wu1, Xiaojuan Gong2, Yunping Li3
1National Key Laboratory of Science and Technology on High-Strength Structural Materials, Central South University, Changsha 410083, China.
Materials (Basel, Switzerland)
|January 28, 2026
Summary
Doping silicon oxycarbide (SiOC) ceramics with titanium (Ti) enhances high-temperature oxidation resistance. A Ti-doping ratio of 0.05 improved the protective oxide layer, reducing cracks and improving self-healing.
Area of Science:
- Materials Science
- Ceramic Engineering
- High-Temperature Materials
Background:
- Silicon oxycarbide (SiOC) ceramics suffer premature failure in high-temperature applications due to thermal stress-induced cracks.
- Improving the oxidation resistance of SiOC is crucial for demanding environments.
Purpose of the Study:
- To investigate the effect of titanium (Ti) doping on the oxidation behavior of SiOC ceramics at 1500 °C.
- To determine the optimal Ti doping concentration for enhanced oxidation resistance and structural integrity.
Main Methods:
- Synthesis of Ti-doped SiOC (SiTiOC) ceramics with varying Ti:Si molar ratios.
- Oxidation testing of SiTiOC in air at 1500 °C for 32 hours.
- Comprehensive analysis of the resulting oxide layer composition and microstructure.
Main Results:
- SiTiOC with a Ti:Si molar ratio of 0.05 exhibited superior oxidation resistance.
- The protective oxide layer comprised SiO2 and TiO2, with TiO2 and TiSiO4 at grain boundaries, inhibiting crack propagation.
- Higher Ti doping (0.2 ratio) led to pores, cracks, and exacerbated Ti diffusion and TiC oxidation.
Conclusions:
- Ti doping effectively enhances the oxidation resistance of SiOC ceramics by forming a robust composite oxide layer.
- An optimal Ti:Si molar ratio of 0.05 yields a dense, self-healing oxide layer with low oxygen permeability.
- Excessive Ti doping can compromise the oxide layer integrity, negating the benefits.
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