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InAlN/GaN Detectors for Real-Time Dosimetry in Ultra-High Dose Rate FLASH Radiotherapy
Si Young Choi1, Cierra Anderson1, Kevin Dai2
1Department of Electrical Engineering, Columbia University, New York, NY 10027, USA.
IEEE Sensors Letters
|February 2, 2026
Summary
New InAlN/GaN-on-Si detectors show promise for FLASH radiotherapy. These solid-state detectors can monitor individual radiation pulses in real-time, offering high sensitivity and speed for advanced cancer treatments.
Area of Science:
- Semiconductor physics
- Radiation detection
- Medical physics
Background:
- FLASH radiotherapy requires advanced dosimetry systems for real-time monitoring.
- Existing detectors face limitations in speed and sensitivity for ultra-high dose-per-pulse (UH-DPP) applications.
Purpose of the Study:
- To characterize InAlN/GaN-on-Si solid-state detectors under UH-DPP electron irradiation.
- To evaluate their suitability for clinical FLASH radiotherapy dosimetry.
Main Methods:
- Testing unpassivated Ni/Au metal-semiconductor-metal (MSM) and two-dimensional electron gas (2DEG) interdigital transducer (IDT) detectors.
- Irradiation with UH-DPP electron beams.
- Analysis of transient performance, signal-to-noise ratio (SNR), and dose-dependent voltage responses.
Main Results:
- 2DEG IDT detectors demonstrated superior transient performance, resolving 3 μs rise and 325 μs fall times.
- Achieved SNR exceeding 220 under 2 Gy pulses.
- Showed consistent, dose-dependent responses with high sensitivity (0.5-0.9 V/Gy) and normalized sensitivity (48.75 nC/Gy/mm²), outperforming SiC and diamond detectors.
Conclusions:
- InAlN/GaN detectors are highly promising for compact, high-speed, radiation-tolerant dosimetry.
- They enable real-time single-pulse monitoring crucial for clinical FLASH radiotherapy.
- These detectors represent a significant advancement for advanced radiation therapy applications.
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