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Updated: Feb 4, 2026
08:07
Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
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Transition Between Digital Switching and Analog Synapse in AgOx/SnSe2 Memristor Through Thickness Engineering
Tao Zhou1, Xiaoyu Wang1, Xueting Liu1
1Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan, P. R. China.
Small (Weinheim an Der Bergstrasse, Germany)
|February 2, 2026
Summary
This study presents a novel AgOₓ/SnSe₂ memristor with tunable digital and analog switching. Thickness engineering of the AgOₓ layer enables versatile functionalities for neuromorphic computing and advanced memory applications.
Area of Science:
- Materials Science
- Nanotechnology
- Solid-State Electronics
Background:
- Memristors offer a solution to von Neumann architecture limitations by mimicking biological synapses.
- Achieving controllable digital and analog switching in a single memristor device remains a significant challenge.
Purpose of the Study:
- To demonstrate a silver oxide (AgOₓ)/tin selenide (SnSe₂) memristor with tunable digital and analog switching behaviors.
- To investigate the effect of AgOₓ layer thickness on memristor performance and switching characteristics.
Main Methods:
- Fabrication of AgOₓ/SnSe₂ memristors using moderate-temperature thermal oxidation.
- Modulation of device functionality by precisely controlling the AgOₓ layer thickness (75 nm for digital, 35 nm for analog).
- Characterization of switching behavior, ON/OFF ratio, subthreshold swing, retention, and air stability.
Main Results:
- A thick AgOₓ layer (75 nm) resulted in digital switching with a high ON/OFF ratio (>10⁶), low subthreshold swing (<10 mV dec⁻¹), and excellent retention (5000 s).
- A thin AgOₓ layer (35 nm) induced gradual resistive switching, demonstrating analog synapse behavior suitable for synaptic weight modulation.
- The device showed potential for signal recognition, exemplified by electrocardiogram (ECG) signal processing.
Conclusions:
- AgOₓ layer thickness engineering provides a facile strategy for tuning memristor behavior between digital and analog modes.
- Silver oxide-based memristors hold significant promise for multifunctional memory and neuromorphic computing applications.
- The developed memristor exhibits robust performance and air stability, crucial for practical implementation.
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