First principles band structure of interacting phosphorus and boron/aluminumδ-doped layers in silicon

Silicon can be heavily doped with phosphorus in a single atomic layer (aδlayer), significantly altering the electronic structure of the conduction bands within the material. Recent progress has also made it possible to further dope silicon with acceptor-basedδlayers using either boron or aluminum, making it feasible to create devices with interactingδlayers with opposite polarity. Using density functional theory, we calculate the electronic structure of a phosphorus-basedδlayer interacting with a boron or aluminumδlayer, varying the distances between theδlayers. At separations 1 nm and smaller, the dopant potentials overlap and largely cancel each other out, leading to an electronic structure closely mimicking intrinsic silicon. At separations greater than 1 nm, the twoδlayers behave independently of one another, with an equivalent electronic structure to ap-ndiode with an intrinsic layer taking the place of the depletion region. One mechanism for charge transfer betweenδlayers at larger distances could be tunneling, where we see a tunneling probability exceeding what would be seen for a standard silicon 1.1 eV triangular barrier, indicating that the interaction between delta layers may enhance tunneling compared to a traditional junction.