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Updated: Feb 16, 2026

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
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Room Temperature Processed Amorphous Sn-Excess-ITO Electrodes for High Performance Perovskite Light-Emitting Diodes.

Ye-Seo Lee1, Jihun Kim1, So Mang Park1

  • 1School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, Republic of Korea.

Small Methods
|February 15, 2026
PubMed
Summary
This summary is machine-generated.

Room-temperature processed, grain boundary-free indium tin oxide (ITO) electrodes offer a new path for efficient perovskite light-emitting diodes (PeLEDs). These amorphous SE-ITO films achieve high performance without high-temperature processing.

Keywords:
co‐sputteringindium tin oxidemagnetron sputteringperovskite light emitting diodesroom‐temperature deposition

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Nanotechnology

Background:

  • High-efficiency perovskite light-emitting diodes (PeLEDs) require transparent electrodes with low sheet resistance, high transmittance, and smooth morphology.
  • Conventional crystalline indium tin oxide (ITO) electrodes need high-temperature processing, limiting their use in flexible and low-temperature device architectures due to grain boundaries and surface roughness.

Purpose of the Study:

  • To develop room-temperature processed transparent electrodes for high-efficiency PeLEDs.
  • To overcome the limitations of conventional ITO electrodes for flexible and low-temperature device fabrication.

Main Methods:

  • Fabrication of amorphous Sn excess doped indium tin oxide (SE-ITO) electrodes using RF-RF co-sputtering of In2O3 and SnO2 at room temperature.
  • Optimization of Sn4+ dopant concentration (19 wt.%) and oxygen vacancy engineering.
  • Characterization of SE-ITO electrode properties (sheet resistance, optical transmittance) and performance in green PeLEDs.

Main Results:

  • Amorphous SE-ITO electrodes achieved a low sheet resistance of 10 Ω sq⁻¹ and high visible transmittance of 85% at room temperature.
  • PeLEDs utilizing SE-ITO anodes demonstrated a peak external quantum efficiency of 17.5% and maximum luminance of 1860 cd m⁻², outperforming devices with commercial crystalline ITO.
  • The SE-ITO films exhibited an atomically smooth morphology, free of grain boundaries.

Conclusions:

  • Fully amorphous, room-temperature processed SE-ITO electrodes are a viable alternative to crystalline ITO for PeLED applications.
  • The developed SE-ITO electrodes enable high-efficiency, flexible, and thermally compatible PeLED technologies.
  • This work presents a new pathway for advancing PeLED performance and manufacturing.