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Non-ohmic Devices

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...

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Related Experiment Video

Updated: Feb 18, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Multi-Physical Field Modulated P-Bit Device Based on VO₂ Thin Film.

Bowen Sun¹, Jianjun Li¹, Ting Zhou¹

¹National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui, P. R. China.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)

|February 16, 2026

Summary

Researchers developed novel vanadium dioxide (VO2)-based probability bits (P-bits) for faster combinatorial optimization. These P-bits utilize synergistic multi-physical field modulation for tunable randomness, overcoming limitations of traditional CMOS P-bits.

Keywords:

mott oscillator phase‐change‐material (PCM)probability bit (P‐bit)vanadium dioxide

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Area of Science:

Materials Science
Computer Engineering
Physics

Background:

Probabilistic computation using probability bits (P-bits) shows promise for combinatorial optimization problems like integer factorization due to rapid search capabilities.
Traditional complementary metal-oxide-semiconductor (CMOS) P-bit implementations require external noise sources, complicating fabrication and system integration.

Purpose of the Study:

To propose a novel vanadium dioxide (VO2)-based P-bit device that overcomes the limitations of traditional CMOS P-bits.
To demonstrate a synergistic multi-physical field modulation strategy for enhanced P-bit performance and neuromorphic applications.

Main Methods:

Development of a VO2-based P-bit device.
Implementation of synergistic multi-physical field modulation (electric, thermal, optical) for real-time tunability of randomness.
Evaluation of device durability and inherent randomness.

Main Results:

The proposed VO2-based P-bit exhibits excellent durability and inherent randomness.
Output probability is adjustable via synergistic multi-physical field modulation, offering an advantage over single-field controlled P-bits.
Demonstrated a new phase-change material-based device approach for high-performance P-bits.

Conclusions:

The VO2-based P-bit offers a viable solution for efficient probabilistic computation and combinatorial optimization.
Synergistic multi-physical field modulation presents a novel strategy for advanced neuromorphic device applications.