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Published on: February 8, 2018
A Thin Film Source in a Solid-State Diffusion Experiment: CoO on SrTiO3.
Qian Ma1, Janina Malin Rybak1, Natalie Jacqueline Ottinger1
1Institut für Materialphysik, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany.
We developed a thin film method for creating sharp interfaces for diffusion experiments. This technique enables precise analysis of diffusion profiles in materials like cobalt oxide on strontium titanate.
Area of Science:
- Materials Science
- Solid-State Chemistry
- Surface Science
Background:
- Quantitative analysis of diffusion profiles requires sharp interfaces.
- Fabricating such interfaces for diffusion studies is challenging.
Purpose of the Study:
- To demonstrate a thin film deposition method for creating sharp interfaces for diffusion experiments.
- To investigate cobalt (II) oxide (CoO) film growth on strontium titanate (STO) for use as a diffusion source.
Main Methods:
- Ion beam sputtering for CoO thin film deposition on STO at room temperature.
- Diffusion annealing to induce Co diffusion.
- Characterization using energy dispersive X-ray spectroscopy (EDS) in a transmission electron microscope (TEM), atom probe tomography (APT), and time-of-flight secondary ion mass spectroscopy (ToF-SIMS).
Main Results:
- Nearly single-crystalline, epitaxial CoO films with flat, sharp interfaces on STO were achieved.
- Conditions for maintaining stable CoO layers as a constant Co diffusion source were identified.
- Partial formation of Co3O4 phase observed after diffusion annealing.
- Co-diffusion profiles were successfully measured using multiple techniques.
Conclusions:
- The demonstrated thin film method provides a reliable way to create sharp interfaces for diffusion studies.
- The CoO/STO system serves as a model for studying diffusion in oxides.
- Discrepancies in diffusion constants across different measurement scales were observed and discussed.
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