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Updated: Feb 21, 2026

Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

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Published on: November 30, 2012

High-performance dual-band silicon slow-light modulator for DWDM chip-scale applications.

Zanyun Zhang, Hao Jiang, Meixin Li

|February 20, 2026

Summary

This study introduces a compact silicon slow-light modulator using phase-shifted Bragg gratings. It achieves high-speed modulation and dual-band operation, offering an efficient solution for dense wavelength division multiplexing (DWDM) systems.

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Area of Science:

Photonics and Optical Engineering
Semiconductor Devices
Integrated Optics

Background:

Slow-light modulators are crucial for advanced optical communication systems.
Existing modulators face limitations in bandwidth, footprint, and operational range.
Silicon photonics offers a scalable platform for integrated optical devices.

Purpose of the Study:

To develop a silicon slow-light modulator with enhanced performance characteristics.
To enable dual-band modulation (C and L bands) for increased spectral efficiency.
To provide a compact and energy-efficient solution for chip-scale interconnects.

Main Methods:

Utilized cascaded phase-shifted Bragg grating (PSBG) structures.
Designed for ultra-compact modulation length (201 µm).
Integrated CMOS compatibility for fabrication.

Main Results:

Achieved C/L dual-band modulation with consistent performance.
Demonstrated an ultra-compact modulator with 85 GHz electro-optic bandwidth.
Reached a modulation speed of 128 Gbaud (On-Off Keying) and energy efficiency of 0.242 pJ/bit.
Exhibited a flat passband exceeding 20 nm in both C and L bands.

Conclusions:

The developed silicon slow-light modulator offers a breakthrough in operational bandwidth and efficiency.
Its compact size, low insertion loss, and high bandwidth make it ideal for DWDM chip-scale interconnects.
The device represents a significant advancement in silicon photonics for optical communications.