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Low-Threshold Lasing in Colloidal InP/ZnSe/ZnS Quantum Dots via ZnSe Interlayer Engineering.

Kaien Chong¹, Yi Yang¹, Xiaoqing Zhou²

¹Key Zhejiang Key Laboratory of 3D Micro/Nano Fabrication and Characterization, Department of Electronic and Information Engineering, School of Engineering, Westlake University, Hangzhou, Zhejiang 310030, China.

|February 26, 2026

Summary

This summary is machine-generated.

We demonstrate lasing in red-emitting indium phosphide (InP) quantum dots (QDs) for display applications. Optimizing the shell thickness is crucial to minimize defects and achieve efficient light amplification for laser applications.

Keywords:

InP quantum dots amplified spontaneous emission hot-carrier trapping liquid lasers optical gain

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Area of Science:

Materials Science
Optoelectronics
Nanotechnology

Background:

Colloidal indium phosphide (InP) quantum dots (QDs) are heavy-metal-free alternatives for display technologies.
Their potential for light amplification and use in lasers remains largely unexplored.

Purpose of the Study:

To investigate light amplification and lasing in InP/ZnSe/ZnS core/multishell quantum dots.
To understand the role of shell thickness and defect states on optical gain properties.

Main Methods:

Fabrication of InP/ZnSe/ZnS core/multishell quantum dots with varying ZnSe interlayer thickness.
Characterization using time-resolved spectroscopy to analyze carrier dynamics and Auger losses.
Construction and testing of a liquid-state vertical-cavity surface-emitting laser (VCSEL).

Main Results:

Achieved lasing in red-emitting InP QDs with high quantum yield.
Demonstrated that optimal ZnSe interlayer thickness reduces amplified spontaneous emission thresholds.
Identified defect states capturing hot carriers as a factor increasing losses and hindering population inversion.
Observed lasing thresholds of 334 μJ/cm² (femtosecond) and 4.3 mJ/cm² (nanosecond) in the VCSEL.

Conclusions:

InP-based QDs show significant potential as optical gain media for laser applications.
Minimizing defects that capture hot carriers is essential for improving the lasing performance of InP QDs.