Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Personalized Radiotherapy and Treatment Strategies for Locally Advanced Rectal Cancer: Early Outcomes of a Tailor-Made Total Neoadjuvant Therapy Protocol.

Cancers·2026

Same author

Amyloid-β1-42 oligomers compromise oligodendrocyte precursor cells and disrupt blood-brain barrier integrity in vitro.

Brain research·2026

Same author

Incidence and Risk Factors for Lumbar Spondylolysis in Adolescent Rugby Players: A Prospective Study.

Clinical journal of sport medicine : official journal of the Canadian Academy of Sport Medicine·2026

Same author

Acute Food Protein-Induced Enterocolitis Syndrome Selectively Induced by Durum Wheat: A Case Report.

Cureus·2026

Same author

Patients' Visiting Preferences in Japan under Universal Coverage and Free Access.

BJGP open·2026

Same author

Paroxysmal dyspnea in multiple system atrophy: a case of severe floppy arytenoid.

Acta neurologica Belgica·2026

Search research articles

Related Experiment Video

Updated: Mar 1, 2026

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

Circularly polarized (0001) InGaN-based LED integrated with GaN metasurface.

Yohei Taguchi, Yuki Murata, Kyohei Suzuki

|February 27, 2026

Summary

Researchers developed a new circularly polarized light-emitting diode (CP-LED) using an InGaN-based material and a metasurface. This innovative device achieves high polarization and efficiency, overcoming previous limitations in CP light sources.

More Related Videos

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

Published on: June 7, 2019

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

Related Experiment Videos

Last Updated: Mar 1, 2026

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

Published on: June 7, 2019

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

Area of Science:

Optoelectronics
Materials Science
Nanotechnology

Background:

Ultrasmall circularly polarized (CP) light-emitting devices are crucial for advanced applications.
Conventional CP light-emitting diodes (CP-LEDs) face challenges with durability, polarization degree, and quantum efficiency.

Purpose of the Study:

To propose and demonstrate a novel (0001) InGaN-based CP-LED integrated with a single-layer metasurface.
To convert unpolarized light into highly efficient CP light.

Main Methods:

Integration of a GaN-based metasurface directly onto the light-emitting surface of an InGaN-based LED.
Characterization of the CP light properties, including polarization degree and transmission efficiency.

Main Results:

Achieved a high circular polarization degree of 0.87.
Obtained a high transmission efficiency of approximately 35% for vertically extracted light.
The CP-LED utilizes stable inorganic materials.

Conclusions:

The developed InGaN-based CP-LED with a metasurface overcomes the trade-off between quantum efficiency and polarization degree.
This novel CP light source offers improved performance and stability for practical applications.