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Related Experiment Video

Updated: Mar 21, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Stacking-engineered 2D CrSeBr multiferroic for promising quantum information processing applications.

Ayushi Jain¹, Chandan Bera¹

¹Institute of Nano Science and Technology, Sector-81, Knowledge City, Sahibzada Ajit Singh Nagar, Punjab 140306, India.

|March 19, 2026

Summary

This summary is machine-generated.

This study reveals CrSeBr as a novel two-dimensional multiferroic material with tunable magnetic, ferroelectric, and ferrovalley properties. Interlayer sliding in bilayers offers a pathway for advanced electronic and quantum information processing devices.

Keywords:

ferrovalley magnetic phase transition multiferroicity sliding ferroelectricity two-dimesional material

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Area of Science:

Materials Science
Condensed Matter Physics
Solid State Chemistry

Background:

Two-dimensional (2D) multiferroic materials are crucial for next-generation electronic devices, enabling miniaturization and integration.
Developing materials with coupled magnetic, ferroelectric, and valley functionalities is key for multifunctional applications.

Purpose of the Study:

To investigate the multiferroic properties of CrSeBr, a novel 2D material.
To explore the interplay between magnetic, ferroelectric, and valley characteristics in monolayer and bilayer CrSeBr.
To assess the potential of interlayer sliding for manipulating these properties.

Main Methods:

Comprehensive first-principles calculations were employed to study the electronic and magnetic properties of CrSeBr.
Analysis of spontaneous valley polarization, magnetic phase transitions, and ferroelectric switching.
Investigation of interlayer sliding mechanisms and energy barriers.

Main Results:

Monolayer CrSeBr exhibits spontaneous valley polarization (up to 26 meV) controllable by magnetization.
Bilayer CrSeBr shows tunable properties via interlayer sliding, including magnetic phase transitions (antiferromagnetic to ferromagnetic).
Reduced interlayer sliding energy barriers (12.5 meV/f.u.) for ferroelectric switching were demonstrated.

Conclusions:

CrSeBr is a promising 2D multiferroic material with coupled functionalities.
Interlayer sliding provides a practical method for tuning multiferroicity in van der Waals heterostructures.
This work offers design principles for advanced electronic, valleytronic, and quantum information processing devices.