Tailored Transport and Logic Capability of 2D Group IV-VI Semiconductor-Based Multibridge Channel FETs

Area of Science:

• Semiconductor Physics
• Materials Science
• Nanotechnology

Background:

• Two-dimensional (2D) semiconductors are crucial for advanced transistor scaling.
• Multibridge channel field-effect transistors (MBC-FETs) offer a pathway to overcome current scaling limitations.

Purpose of the Study:

• To design and analyze MBC-FETs based on 2D group IV-VI materials for multifunctional logic devices.
• To investigate the operational mechanism and tailored transport behaviors of MBC-FETs.
• To demonstrate logic operations using MBC-FETs for next-generation integrated circuits.

Main Methods:

• Vertical stacking of multiple conductive channels and gate electrodes to create MBC-FETs.
• Analysis of potential difference, local density of states, transmission spectra, and projected density of states.
• Implementation of YES, NAND, NOR, Y = A̅, and Y = B̅ logic operations through precise doping and bias control.

Main Results:

• Demonstrated double-gate double-channel MBC-FETs with a subthreshold swing (SS) of 96.2 mV/dec achieving YES, NAND, and NOR logic.
• Showcased triple-gate double-channel MBC-FETs with an SS of 81 mV/dec enabling Y = A̅, NAND, and Y = B̅ logic operations.
• Precisely controlled logic operations via electrode doping and programmable bias voltage.

Conclusions:

• MBC-FETs based on 2D group IV-VI materials are viable for advanced logic devices.
• The study provides a comprehensive analysis of the operational mechanism for tailored transport behaviors.
• This work supports the development of multifunctional logic devices and the continuation of Moore's Law.