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Updated: Apr 17, 2026
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Stacking of MoS2 monolayers by sequential electrochemical thinning of bulk crystals
Isaque A A Feitosa1,2, Renan G de Assis1,2, Matheus F F das Neves1
1Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo, 13083-970, Brazil. murilo.santhiago@lnnano.cnpem.br.
Abstract:
Stacking of MoS2 is achieved via sequential electrochemical thinning (eTH) of bulk flakes directly on Au electrodes, enabling controlled large-area vertical stacks (∼550 µm2). The approach preserves the 2H phase, minimizes oxidation, and enhances photoluminescence (∼6x) through interlayer decoupling, establishing a robust platform for electrochemical energy applications.
