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Updated: Apr 29, 2026

Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

Published on: November 30, 2012

Glass Interposer Assisted Edge Coupling to SiN Photonic Integrated Circuits.

Ipsita Chakraborty¹, Elliot Sandell¹, Thalía Domínguez Bucio¹

¹Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, United Kingdom.

ACS Photonics

|April 20, 2026

Summary

This study introduces a novel waveguide array to fiber (WAFT) interposer for high-density photonic integrated circuits. The WAFT solution enables low-loss, multichannel fiber-to-chip coupling, addressing a key bottleneck in advanced PIC applications.

Keywords:

edge couplers fiber-to-chip coupling high-density photonic interconnects scalable photonic packaging silicon nitride (SiN) photonics waveguide array to fiber (WAFT) interposer

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Area of Science:

Photonics and Optical Engineering
Materials Science
Integrated Circuit Design

Background:

Scaling fiber-to-chip interfaces is crucial for high-performance photonic integrated circuits (PICs).
Existing solutions face limitations in density and bandwidth, hindering advanced PIC integration.
A critical bottleneck exists in packaging solutions for dense, high-bandwidth PICs.

Purpose of the Study:

To present a novel, high-density edge coupling solution for PICs.
To enable low-loss, simultaneous multichannel coupling to silicon nitride (SiN) chips.
To address the critical packaging bottleneck in advanced PIC integration.

Main Methods:

Utilized a glass-based waveguide array to fiber (WAFT) interposer.
Designed and fabricated SiN edge couplers optimized for WAFT-coupled fibers.
Characterized the full coupling interface across O and C optical bands.

Main Results:

Achieved exceptional density of up to 67 input/output (I/O) channels per millimeter.
Measured low fiber-to-chip coupling loss (CL) per port: 1.55-1.81 dB (TE)/1.55-1.93 dB (TM) in O band and 1.67-1.86 dB (TE)/1.58-1.69 dB (TM) in C band.
Demonstrated low polarization-dependent loss (PDL) with CL of 1.42-1.62 dB/port at 1310 nm and 1.35-1.83 dB/port at 1550 nm.

Conclusions:

The WAFT-based edge coupling solution offers a promising approach for scalable PIC integration.
This method effectively bridges single-mode fibers to SiN chips with mode-field matching.
The solution addresses a critical packaging bottleneck for high-density, bandwidth-flexible PIC applications.