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Updated: Apr 28, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Atomistic Origin of RTN-like Centers Created and Annihilated by RRAM Write Processes

Paul Solomon1, Manasa Kaniselvan2, Hiroyuki Miyazoe1

  • 1IBM T.J. Watson Research Center, 1101 Kitchawan Rd, Yorktown Heights, New York 10598, United States.

Nano Letters
|April 27, 2026
PubMed
Abstract

Keywords:
ReRAMkinetic Monte Carlomemristorresistive switching devicesvalence change memory

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