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Three-Dimensional Nanopatterning Using Extreme Ultraviolet Colloidal Talbot Lithography
Saurav Mohanty1, Ethan Flores1, Daniel Hur1
1Walker Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States.
Nano Letters
|April 30, 2026
Summary
This study introduces extreme ultraviolet (EUV) colloidal Talbot lithography (CTL) to create 3D nanostructures. This novel method achieves 25 nm feature sizes in a single exposure, advancing nanolithography capabilities.
Area of Science:
- Nanotechnology
- Lithography
- Materials Science
Background:
- Current extreme ultraviolet (EUV) lithography is restricted to 2D structures.
- Scaling challenges persist for high-resolution 3D nanostructure fabrication.
Purpose of the Study:
- To demonstrate EUV colloidal Talbot lithography (CTL) for 3D nanostructure patterning.
- To achieve 25 nm minimum feature sizes in 3D using a single exposure.
Main Methods:
- Utilized a self-assembled nanosphere monolayer as a binary mask.
- Employed a tabletop high-harmonic generation (HHG) EUV source for volumetric patterning.
- Conducted finite difference time domain (FDTD) simulations to analyze interference patterns.
Main Results:
- Successfully fabricated 2D nanostructures with tunable unit-cell geometry.
- Achieved 3D nanostructures with feature sizes as small as 25 nm.
- Demonstrated single-exposure 3D EUV lithography with high fringe contrast.
Conclusions:
- EUV CTL is a cost-effective method for single-exposure 3D nanolithography.
- The technique requires minimal hardware, making it broadly accessible.
- Applications include nanophotonics, quantum devices, and advanced materials.
