Quantitative Single-Particle Analysis: Plasmon Damping Modulation via Interfacial Engineering in Metal-Semiconductor

Rafifah Hana Raihana Syam1, Yola Yolanda Alizar1, Ji Won Ha1

  • 1Department of Chemistry, University of Ulsan, 93 Daehak-ro, Nam-gu, Ulsan 44610, Republic of Korea.

Summary

Surface damping competition in metal-semiconductor heterostructures is key for controlling plasmon lifetimes. Semiconductor interface damping (SID) dominates, suppressing chemical interface damping (CID) and impacting photocatalysis.