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Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation
Published on: December 21, 2015
Near-zero Poisson's ratio monolayer bismuthene
Lingling Bai1, Runqing Zhang2, Huafeng Dong3
1School of Electronics and Electrical Engineering, Zhaoqing University, Zhaoqing 526061, China.
Physical Chemistry Chemical Physics : PCCP
|May 14, 2026
Summary
Monolayer P2/m bismuthene exhibits unique mechanical anisotropy and a tunable electronic structure. This rare 2D material shows potential for flexible optoelectronics due to its strain-induced band gap changes.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Computational Materials Science
Background:
- Two-dimensional (2D) materials offer unique properties for advanced applications.
- Mechanical and electronic properties of 2D materials are crucial for device design.
- Bismuthene is an emerging 2D material with potential for novel functionalities.
Purpose of the Study:
- To investigate the mechanical and electronic properties of monolayer P2/m bismuthene using first-principles calculations.
- To explore the effects of uniaxial strain on the material's anisotropy and band gap.
- To assess the potential of P2/m bismuthene for flexible optoelectronic applications.
Main Methods:
- First-principles density functional theory (DFT) calculations.
- Simulation of uniaxial strain along armchair (X) and zigzag (Y) directions.
- Analysis of mechanical anisotropy (Poisson's ratio) and electronic band structure.
Main Results:
- Monolayer P2/m bismuthene displays significant mechanical anisotropy with distinct Poisson's ratios (0.737 for X, 0.056 for Y).
- Uniaxial strain tunes the electronic band gap from 0.12 to 0.39 eV.
- A reversible, strain-induced transition from indirect- to direct-band-gap semiconductor is observed.
Conclusions:
- P2/m bismuthene is a rare 2D material with coupled anisotropic mechanical and tunable electronic properties.
- Its unique characteristics make it a promising candidate for flexible optoelectronic devices.
- Theoretical insights guide future experimental synthesis and application of P2/m bismuthene.
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