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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Published on: December 23, 2013

Copper-Epoxy Interface Engineering for High-Frequency Chip-to-Chip Interconnects.

Junghyun Park1, Ignace Agbadan1, Monsuru Dauda1

  • 1Gordon A. and Mary Cain Department of Chemical Engineering, Louisiana State University, Baton Rouge, Louisiana 70803, United States of America.

ECS Journal of Solid State Science and Technology : JSS
|May 25, 2026
PubMed
Summary
This summary is machine-generated.

This study investigated the durability of chip-to-chip interconnects under temperature cycling. The cobalt-tungsten-phosphide (CoW0.66P0.17) interlayer demonstrated superior reliability for high-frequency applications.

Keywords:
Chip-to-chip (C2C) interconnectcladdingcoupling agentmetal interlayermultichip packageoxidationpolymer-metal adhesion

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Surface Chemistry

Background:

  • High-frequency chip-to-chip (C2C) interconnect reliability depends on durable copper interconnects and polymer dielectric interfaces.
  • Understanding interface behavior under thermal stress is crucial for advanced electronics.

Purpose of the Study:

  • To evaluate the temperature cycling performance of copper-epoxy interfaces with various adhesion promoters and metal interlayers.
  • To identify materials and structures that enhance the durability of C2C interconnects.

Main Methods:

  • Utilized X-ray photoelectron spectroscopy (XPS) for chemical state analysis.
  • Employed energy-dispersive X-ray spectroscopy (EDS) for oxygen diffusion analysis.
  • Measured adhesion strength (peel test), sheet resistance (four-point probe), and insertion loss (vector network analyzer).

Main Results:

  • Organic adhesion promoters improved initial adhesion but weakened interfaces post-cycling due to copper oxidation.
  • The CoW0.66P0.17 metallic interlayer showed enhanced durability.
  • CoW0.66P0.17 exhibited minimal insertion loss increase (0.02 dB mm-1 at 18 GHz) after 1500 cycles.

Conclusions:

  • Copper oxidation at interfaces is a key failure mechanism during temperature cycling.
  • The CoW0.66P0.17 interlayer offers a promising solution for reliable high-frequency C2C interconnects.
  • Interface engineering with specific metallic interlayers is vital for long-term interconnect performance.