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Related Concept Videos

Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
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Imperfections in Crystal Structure: Non-Stoichiometric Defects

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Colors and Magnetism

Color in Coordination Complexes
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Phase-Dependent Functionality and Defect-Induced Magnetism in Monolayer SnTe Polymorphs.

Roya Kavkhani1, Berna Akgenc Hanedar2, Mehmet Cengiz Onbaşlı1,3,4

  • 1Graduate School of Sciences and Engineering (GSSE), Koç University, Rumelifeneri Yolu, Sarıyer, Istanbul 34450, Türkiye.

ACS Applied Materials & Interfaces
|June 3, 2026
PubMed
Summary
This summary is machine-generated.

Monolayer tin telluride (SnTe) properties are tunable via crystal phase and defects. Cubic SnTe shows high hole mobility, while doping enables selective electronic and magnetic behaviors for optoelectronic applications.

Keywords:
carrier mobilitydefect engineeringinfrared optoelectronicsmagnetic semiconductorsmonolayer SnTephase engineeringtwo-dimensional materials

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Published on: April 12, 2019

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Solid-State Chemistry

Background:

  • Monolayer tin telluride (SnTe) presents tunable electronic and magnetic properties.
  • Control is achieved through crystal phase and local defect chemistry.

Purpose of the Study:

  • Investigate how crystal phase and defects influence SnTe monolayer properties.
  • Identify promising configurations for functional materials design.

Main Methods:

  • First-principles calculations were employed.
  • Studied four SnTe polymorphs, including defect engineering via doping and vacancies.

Main Results:

  • Cubic and γ-SnTe are the most stable phases.
  • Distinct electronic and transport regimes were observed across phases (e.g., high hole mobility in cubic SnTe).
  • Defect engineering in cubic SnTe leads to metallicity, while γ-SnTe allows for tunable semiconducting behavior. Mn doping in γ-SnTe creates a magnetic semiconducting state.

Conclusions:

  • Phase selection dictates intrinsic band gap and transport properties of monolayer SnTe.
  • Defect engineering offers additional control over metallicity, magnetism, and carrier polarity.
  • Monolayer SnTe is a versatile platform for infrared optoelectronics and spintronic applications.