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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Optically Programmable Antisymmetric Longitudinal Resistance Enabled by Local Domain Asymmetry
Guanqi Li1, Youzhi Gu1, Jiajun Li1
1School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China.
Nano Letters
|June 9, 2026
Summary
Antisymmetric longitudinal resistance (ALR) arises from local potential differences caused by magnetic domain asymmetry. This discovery clarifies ALR
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Antisymmetric longitudinal resistance (ALR) is a significant transport phenomenon in magnetic multilayers.
- The precise microscopic origin of ALR has been a subject of ongoing research and debate.
- Understanding ALR is crucial for advancing spintronic device applications.
Purpose of the Study:
- To elucidate the microscopic origin of antisymmetric longitudinal resistance (ALR).
- To establish a direct link between ALR and magnetic domain distribution.
- To explore the potential of ALR for future spintronic technologies.
Main Methods:
- Utilized multiprobe transport measurements.
- Employed in situ magneto-optical Kerr imaging.
- Manipulated magnetic domain structures using a femtosecond laser.
Main Results:
- Demonstrated that ALR originates from anomalous Hall effect-induced local potential differences due to asymmetric magnetic domain distribution.
- Established a direct correlation between ALR and magnetic domain configuration in Pt/Co multilayers.
- Showed that ALR amplitude is tunable by controlling the area fraction of reversed magnetic domains.
Conclusions:
- Clarified the microscopic origin of antisymmetric longitudinal resistance.
- Confirmed the role of magnetic domain asymmetry in generating ALR.
- Highlighted the potential of ALR for developing multilevel memory and 3D spintronic architectures.
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