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Related Experiment Video

Updated: Jun 12, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Scaling two-dimensional semiconductor nanoribbons for high-performance electronics.

Hao-Yu Lan1,2, Shao-Heng Yang3,4, Yongjae Cho3,4,5

  • 1Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA. lan36@purdue.edu.

Nature Communications
|June 10, 2026
PubMed
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This summary is machine-generated.

Scaling down transition metal dichalcogenide (TMD) nanoribbon transistors to tens of nanometers enhances performance, boosting on-current density and reducing subthreshold swing for future ultra-scaled electronics.

Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Future transistors require 3D architectures (GAA, CFETs) with channel widths in the tens of nanometers.
  • Monolayer transition metal dichalcogenides (TMDs) are promising atomically thin channel materials.
  • Current TMD field-effect transistors (FETs) are limited to micrometer-scale widths.

Purpose of the Study:

  • Investigate the impact of channel width scaling on monolayer TMD nanoribbon transistors.
  • Determine if performance can be preserved or enhanced at ultra-scaled widths.
  • Explore the underlying mechanisms responsible for performance changes.

Main Methods:

  • Fabrication and characterization of monolayer MoS2 nanoribbon FETs with widths down to ~30-40 nm.

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Last Updated: Jun 12, 2026

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  • Electrical performance analysis, including on-current density and subthreshold swing.
  • Investigation of contact resistance and edge effects.

    • Main Results:

    • Channel width scaling enhanced device performance, increasing median on-current density by ~42% and reducing median subthreshold swing by ~16%.
    • Champion MoS2 device achieved 995 µA µm⁻¹ on-current density.
    • Contact resistance reduced from ~860 Ω µm to ~270 Ω µm due to minimal edge disorder, enhanced electrostatics, and efficient side-contact injection.
    • Achieved 357 µA µm⁻¹ on-currents in WSe2 p-FETs.

    Conclusions:

    • Ultra-scaled monolayer TMD nanoribbon FETs offer enhanced performance compared to wider counterparts.
    • Performance improvements are attributed to reduced edge disorder, better gate electrostatics, and improved contact injection.
    • Monolayer TMD nanoribbon FETs are viable candidates for future ultra-scaled electronic devices.