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Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics
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Doping, Alloying, or Compositing? How Copper Introduction Pathways Dictate Thermoelectric Performance in GeTe.

Yang Li1, Yunpu Zhang1, Yuting Zhang1

  • 1School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China.

ACS Applied Materials & Interfaces
|June 15, 2026
PubMed
Summary

Investigating copper introduction methods in germanium telluride (GeTe) reveals that compositing with BaCu2Te2 significantly enhances thermoelectric performance (zT > 2.0). The pathway impacts carrier concentration, mobility, and thermal conductivity for optimized thermoelectric materials.

Keywords:
GeTealloyscompositesdirect dopingthermoelectric materials

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Nanotechnology

Background:

  • Germanium telluride (GeTe) exhibits promising thermoelectric properties but suffers from high carrier concentrations.
  • Optimizing GeTe performance requires careful control over doping and microstructure.
  • Copper (Cu) is an effective dopant, but its introduction method significantly influences material properties.

Purpose of the Study:

  • To systematically compare the effects of three different copper (Cu) introduction routes on the thermoelectric performance of a Ge0.95Bi0.05Te matrix.
  • To elucidate the distinct mechanisms by which direct doping, alloying, and compositing with BaCu2Te2 influence carrier concentration, mobility, and thermal conductivity.
  • To identify the optimal strategy for enhancing the dimensionless thermoelectric figure of merit (zT) in GeTe-based materials.

Main Methods:

  • Synthesis and characterization of Ge0.95Bi0.05Te samples with Cu introduced via direct doping, BaCu2Te2 alloying, and BaCu2Te2 compositing.
  • Systematic analysis of electrical conductivity, Seebeck coefficient, and thermal conductivity as a function of temperature for each introduction route.
  • Evaluation of carrier concentration, carrier mobility, and density-of-states effective mass to understand performance variations.

Main Results:

  • All three Cu introduction methods reduced hole concentration, increasing the Seebeck coefficient but decreasing electrical conductivity.
  • Direct Cu doping optimized carrier mobility but showed moderate zT (∼1.86) due to limited phonon scattering.
  • The Ge0.95Bi0.05Te + 2.0 wt % BaCu2Te2 composite achieved a peak zT exceeding 2.0 at 623 K due to enhanced carrier scattering and reduced lattice thermal conductivity.

Conclusions:

  • The pathway of Cu introduction critically governs the thermoelectric performance of GeTe by balancing carrier modulation, mobility, effective mass, and phonon scattering.
  • Compositing with BaCu2Te2 offers a superior strategy for enhancing GeTe thermoelectric properties compared to direct doping or alloying.
  • This study provides a framework for synergistically combining doping and secondary-phase engineering in GeTe-based thermoelectric materials.