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Updated: Jun 17, 2026
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Rolling Up Transition Metal Chalcogenides/Oxide Heterostructures Enables Polarity-Tunable and High-Switchable
Xiaofan Wang1, Xiaokai Chen1, Ruixi Qiao1
1Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, China.
Advanced Materials (Deerfield Beach, Fla.)
|June 16, 2026
Summary
We developed a novel superlattice memristor using rolled-up oxide/transition metal dichalcogenide (TMDC) heterostructures. This device offers tunable switching polarity and a high on/off ratio for advanced data storage.
Area of Science:
- Materials Science
- Nanotechnology
- Electronics
Background:
- Transition metal dichalcogenides (TMDCs) are promising for memristors, but limited by single operation modes and low on/off ratios.
- Existing memristor designs struggle to meet the demands of high-density data storage and neuromorphic computing.
Purpose of the Study:
- To design and construct a high-order superlattice-based memristor with tunable resistive switching polarity and an enhanced on/off ratio.
- To explore the potential of rolled-up oxide/TMDC heterostructures for next-generation memristor applications.
Main Methods:
- Fabrication of oxide/TMDC heterostructures using controlled oxygen plasma for in situ oxidation.
- Spontaneous rolling up of heterostructures driven by capillary forces in organic reagents.
- Characterization of the resulting superlattices using cross-section scanning transmission electron microscopy and elemental mapping.
Main Results:
- Successfully created high-order oxide/TMDC superlattices with alternating layers.
- Demonstrated tunable bipolar and unipolar resistive switching by configuring electrode arrangements.
- Achieved a high on/off ratio of approximately 10^7 and robust multilevel resistance performance.
Conclusions:
- The developed superlattice memristor offers a new pathway for high-performance, multimodal memristor design.
- This approach overcomes limitations of single operation modes and insufficient on/off ratios in TMDC-based memristors.
- The tunable polarity and high performance pave the way for advanced data storage and neuromorphic functionalities.
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