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Published on: June 17, 2017
CMOS Electrokinetic Systems and Fabrication Approaches for On-CMOS 3D Electrodes
1Université Marie et Louis Pasteur, SUPMICROTECH, CNRS, Institut FEMTO-ST, Besançon, France.
Electrophoresis
|June 17, 2026
Summary
This review explores CMOS-based electrokinetics, finding 3D electrodes are crucial for overcoming limitations in high conductivity environments and enabling commercial success.
Area of Science:
- Microscale particle manipulation
- Electric field applications
- Semiconductor technology integration
Background:
- Electrokinetics (dielectrophoresis, electroosmosis) are popular for microscale particle manipulation.
- Complementary Metal-Oxide-Semiconductor (CMOS) microchips are a dominant global technology.
- Combining electrokinetics with CMOS offers scalable, functional electric potential-based systems.
Purpose of the Study:
- To survey literature on CMOS-based electrokinetic systems.
- To identify design trends, obstacles, and opportunities in the field.
- To provide future perspectives for advancing CMOS-integrated electrokinetics.
Main Methods:
- Literature review of CMOS-based electrokinetic systems published since 2003.
- Analysis of design trends and limitations.
- Exploration of fabrication approaches for 3D electrodes compatible with CMOS.
Main Results:
- Despite early commercial success, subsequent CMOS-based electrokinetic studies have not achieved similar market penetration.
- The primary limitation identified is the front-end electrode system, particularly planar configurations.
- There is a critical need for 3D electrodes on-CMOS capable of operating in high conductivity environments.
Conclusions:
- Advancing CMOS-based electrokinetics requires moving beyond planar electrode designs.
- Fabrication of 3D electrodes compatible with CMOS systems is essential for future success.
- Overcoming current limitations, especially in electrode design for high conductivity media, is key to commercial viability.
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