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Spin Depolarization Mechanisms in Halide Perovskite Semiconductors
Huygen J Jöbsis1, Sascha Feldmann2
1Laboratory for Energy Materials, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne, Rue de l'Industrie 17, CH-1950 Sion, Switzerland. huygen.jobsis@epfl.ch.
Abstract:
Halide perovskites (HPs) have developed into a promising material platform for investigating spin-optoelectronic applications. A key obstacle for real-world implementation, however, is achieving long electron spin lifetimes under ambient conditions. This review focuses on recent experimental insights into spin relaxation pathways in HP semiconductors. We begin by outlining the four major spin-relaxation mechanisms and highlight the characteristic magnetic-field and temperature dependencies associated with each. These mechanistic 'fingerprints' provide an experimental framework for identifying dominant relaxation channels in HPs. We then survey how different HP compositions, crystal structures, and dimensionalities influence which mechanisms prevail. Finally, we summarize key spectroscopic techniques capable of probing such spin depolarization dynamics and offer complementary information.
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