Post-Moore two-dimensional integrated electronics for angstrom-nodes

As integrated circuits approach the angstrom-nanometer nodes in recent years, the continued downscaling of silicon-based electronics faces fundamental physical limits and escalating manufacturing costs. Two-dimensional (2D) materials-characterized by their atomic thickness, exceptional electrostatic gate control, and inherent suitability for heterogeneous integration-have arisen as promising alternatives to extend device scaling beyond the limits of silicon technology. This review provides a systematic overview of advances in integrated electronics based on 2D materials. The discussion begins with recent developments in wafer-scale synthesis and transfer techniques for 2D semiconductors. Subsequently, progress in high-performance 2D transistors is discussed, focusing on gate dielectric integration, contact optimization, and scaling strategies for high-density and advanced-node configurations. Circuit- and system-level implementations are also surveyed, including logic, memory, and three-dimensional (3D) monolithic integration. Further, key challenges and prospective directions are highlighted for realizing scalable, manufacturable, and low-power 2D electronic systems at the angstrom-nodes.