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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Ziria Herdegen1, Andreas Jehle1, Lea Richter1
1Department of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, Butenandtstr. 11-13, 81377 Munich, Germany.
Defect detection in MoS2 using momentum-resolved scanning transmission electron microscopy (STEM) was optimized. The defocused pixelated STEM method demonstrated superior dose efficiency for identifying intrinsic defects, crucial for materials analysis.
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