Ultralow-Noise Perovskite Photodiodes Enabling High-Fidelity Full-Color Imaging

Perovskite photodiodes have attracted increasing attention for next-generation imaging and sensing; however, their practical deployment remains hindered by elevated noise, device-to-device variability, and limited operational reliability compared to established silicon technologies. These limitations largely originate from interfacial defects and uncontrolled carrier recombination in solution-processed perovskite films. Here we present a vacuum-engineered perovskite photodiode architecture that enables ultralow-noise operation with high reproducibility and imaging-level performance. By constructing the perovskite structure through a controlled multilayer design, interfacial defect density is effectively suppressed, leading to reduced electrical noise and stable charge transport. The resulting devices exhibit an ultralow dark current density of 2.31 × 10^-11 A cm^-2 at 0.2 V, external quantum efficiency exceeding 80% across the visible spectrum, and a wide linear dynamic range of 130 dB, together with a -3 dB bandwidth of 0.33 MHz. These performance characteristics enable high-fidelity full-color imaging using a single-pixel scanning approach, demonstrating accurate image reconstruction with low noise. The devices further maintain over 80% of their initial performance after 500 h of continuous illumination, highlighting their operational stability. This work establishes a general strategy for achieving low-noise and reliable perovskite photodetectors, providing a pathway toward scalable, high performance imaging systems beyond conventional silicon-based technologies.