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Updated: Aug 6, 2026

Gradient Echo Quantum Memory in Warm Atomic Vapor
Published on: November 11, 2013
Robust single-electron memory with quantum states manipulation
Chunsen Liu1, Yutong Xiang1, Chong Wang1
1State Key Laboratory of Integrated Chips and Systems, College of Integrated Circuits and Micro-Nano Electronics, Frontier Institute of Chip and System, Fudan University, Shanghai, China.
Abstract:
The ultimate goal of information storage is single-electron memory. Quantum mechanics predicts that two distinguishable quantum states can be realized by confining a single electron within an ultrasmall space. However, scaling down such devices paradoxically amplifies fringe capacitance effects, which hinders the experimental observation of single-electron memory. We report a two-dimensional single-electron memory device based on a coplanar drain-channel-source structure that suppressed fringe capacitance, exhibiting a nonvolatile threshold voltage shift of 0.5 volts after the change of a single electron. Two intriguing quantum behaviors have also been verified regarding the programming voltage. Additionally, we have predicted and observed a distinctive quantum memory effect: A quantum state is cut off by density of states scissors.
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