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Defect engineered Co-doped SnO2 thin films for highly sensitive NH3 detection: a combined DFT and experimental study
Lemma Tirfie Zegbreal1,2, Newayemedhin A Tegegne1, David E Motaung3
1Department of Physics, Addis Ababa University P.O.Box: 1176 Addis Ababa Ethiopia fekadu.gashaw@aau.edu.et.
None:
This study presents an examination of the development of high-performance Co-doped SnO2 nanocolloidal thin films, which are designed for the highly sensitive and selective detection of NH3. By integrating precise sol-gel synthesis with first-principles Density Functional Theory (DFT), we elucidate the importance of defect engineering in modulating gas surface interactions. The XRD analysis confirmed the tetragonal rutile phase of SnO2, revealing that the 2% Co-doped SnO2 exhibits a significantly reduced crystallite size of 4.88 nm. Furthermore, XPS and PL characterization indicated an increase in surface Ov and OC, while UV-vis results demonstrated band gap narrowing due to doping. The DFT calculations suggested that 2% Co-doping introduces mid-gap 3d states, which enhance electronic sensitization. In comparison to the relatively inert pristine SnO2, the 2% Co-doped variant shows a remarkable 153.54% increase in conductivity upon NH3 adsorption, achieving a selectivity ratio of 31.0 relative to H2. Additionally, kinetic analysis revealed that the addition of Co improves sensor reversibility by lowering the NH3 desorption barrier. The combination of reduced crystallite size, defect-rich surface chemistry, and optimized electronic pathways positions 2% Co-doped SnO2 as an outstanding candidate for highly sensitive NH3 detection.
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