Interfacial engineering mediated carriers' dynamics in Cu2-xS/g-C3N4 p-n heterojunctions for efficient CO2

Feng Yue1, Jing Wang2, Huihui Gan3

  • 1Institute of Hydraulics and Ocean Engineering, School of Civil and Environmental Engineering and Geography Science, Ningbo University, Ningbo 315211, PR China; Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou 450052, PR China.

Abstract

Related Concept Videos

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...