On-chip single-output InAs quantum dot DFB laser for photonic integration

Area of Science:

• Optoelectronics
• Semiconductor Lasers
• Nanophotonics

Background:

• Distributed Feedback (DFB) lasers are crucial for optical communications.
• Achieving high-performance, single-mode emission with integrated control remains a challenge.
• Indium Arsenide Quantum Dots (InAs-QD) offer unique properties for laser applications.

Purpose of the Study:

• To present monolithically integrated InAs-QD DFB lasers with a novel high-reflectivity multi-mode interference reflector (MMIR).
• To demonstrate single-facet emission and precise control over lasing characteristics.
• To achieve high single-mode output power and side-mode suppression ratio (SMSR).

Main Methods:

• Monolithic integration of InAs-QD active regions with MMIR structures.
• Fabrication of DFB lasers designed for single-facet emission.
• Characterization of laser output power, SMSR, and mode control via carrier injection into the MMIR section.

Main Results:

• Achieved over 6 mW single-mode laser output at room temperature.
• Demonstrated SMSR exceeding 50 dB.
• Successfully controlled lasing mode (switching between multi-mode and single-mode) and wavelength selection.
• Attained power attenuation with an extinction ratio (ER) over 50 dB.

Conclusions:

• Monolithically integrated InAs-QD DFB lasers with MMIR are effective for high-performance single-facet emission.
• Carrier injection into the MMIR section provides a powerful mechanism for dynamic control of laser operation.
• These devices show significant potential for advanced optical modulation and wavelength tuning applications.