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Updated: Sep 27, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Quasi-Vertical GaN-Based Trench Gate MOSFETs Treated with Fluorine-Plasma

Peng Zhang1, Dong-Yang Li1, Jia-Rui Xu1

  • 1Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Faculty of Integrated Circuit, Xidian University, Xi'an 710071, China.

Micromachines
|September 26, 2026
PubMed

Keywords:
F-plasma-treatedMOSFETsbreakdown voltagequasi-vertical GaNtrench gate

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