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Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices
Published on: July 8, 2016
Ni-doped CdTe nanostructures for photo response and nonlinear optical applications
Swikruti Supriya1, Lipika Naik2, Gobalakrishnan S3
1Department of Engineering and Materials Physics, Institute of Chemical Technology Indian Oil Odisha Campus Bhubaneswar 751013 India ramakanta.naik@gmail.com.
Abstract:
Ni-doped CdTe nanostructures were successfully synthesized via a facile hydrothermal route, demonstrating the critical role of transition-metal doping in tailoring the functional properties of CdTe-based nanomaterials. Structural analysis using X-ray diffraction (XRD) confirmed the formation of a cubic CdTe phase, with a noticeable reduction in crystallite size from ∼28 to ∼24 nm upon Ni incorporation, indicating lattice modification and enhanced defect density. Field-emission scanning electron microscopy (FESEM) analysis revealed a predominantly nanoparticle-like morphology, suggesting uniform nucleation and growth during the hydrothermal process. X-ray photoelectron spectroscopy (XPS) further elucidated the elemental composition and oxidation states, confirming the successful incorporation of Ni into the CdTe lattice. Optical studies revealed a systematic blue shift in the band gap from 1.84 to 2.23 eV with increasing Ni concentration, accompanied by a decrease in refractive index from 2.95 to 2.55, suggesting tuneable optical dispersion characteristics. Photoconductivity measurements demonstrated a pronounced enhancement in photocurrent under illumination relative to dark conditions, with a maximum photocurrent of 94.05 mA and a detectivity on the order of 106 Jones, indicating good photo response performance. Furthermore, nonlinear optical (NLO) investigations using the Z-scan technique revealed reverse saturable absorption (RSA) behaviour across all samples, as evidenced by positive nonlinear absorption coefficients. These findings collectively establish that Ni-doped CdTe nanostructures possess significant potential for next-generation optoelectronic applications, particularly in good-performance photodetectors and nonlinear optical devices.

