Development and performance of a university-scale extreme ultraviolet (EUV) lithography source

To expand our laboratory's capabilities in Extreme Ultraviolet (EUV) photoresist research, we developed an in-house EUV light source that provides lithography exposures at a cost feasible for a university setting. The system uses an Nd:YAG laser to produce plasma on a tin target, generating EUV radiation without the expensive infrastructure of commercial tools. A 150 nm zirconium transmission filter isolates the EUV, allowing direct exposure of photoresist, and the dose is monitored in real time with an EUV-sensitive photodiode. Using this setup, we demonstrate a clear contrast curve with exposure times typically under 120 seconds, showing that the system delivers controlled and repeatable EUV doses. During optimization, we adjusted laser power, focusing conditions, chamber pressure, and target motion to stabilize the dose and improve EUV output. Plasma debris remains the primary challenge, and we continue to refine target handling and filtering to extend the lifetime of internal components. Compared with commercial platforms costing several million dollars, this tool offers a practical and flexible option for research, enabling the study of new photoresist materials, dose-response behavior, and exposure strategies without depending on limited industrial access. The system thus provides a meaningful bridge that allows academic groups to work directly in the EUV regime.