Electric-Field Tunable Spin Texture in Dual-Gated HfS2/Graphene van der Waals Heterostructures
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Updated: Nov 4, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Haozhe Yang1,2, Zhendong Chi1, Eoin Dolan1
1CIC NanoGUNE BRTA, 20018Donostia-San Sebastian, Basque Country, Spain.
Abstract:
Spin-charge interconversion provides the essential link between spin information and electrical signals in spintronic devices. In spin-orbit coupled systems, spin-charge interconversion can contain multiple components associated with different spin-polarization directions, reflecting the underlying spin texture. Tuning this spin texture, therefore, provides a way to control not only the magnitude of spin-charge interconversion but also the balance among its different components. Graphene-based van der Waals heterostructures provide an attractive platform for this purpose because interfacial spin-orbit coupling can host multiple spin-charge interconversion channels that couple to different spin-polarization directions. Here, we demonstrate electric-field control of spin texture in a dual-gated HfS2/graphene van der Waals heterostructure, where independent control of carrier density and vertical electric field allows us to disentangle electrostatic doping from electric field-induced spin-orbit effects. Nonlocal spin precession measurements show that, near zero vertical electric field, spin-charge interconversion is dominated by a spin Hall component with out-of-plane spins. Increasing the vertical electric field enhances additional in-plane spin components with Rashba-Edelstein-like character, including contributions both parallel and perpendicular to the charge current. These results provide experimental evidence that a vertical electric field can reconfigure the effective spin texture and control the corresponding spin-charge interconversion components, demonstrating electrical tunability of spin-orbit functionalities.
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