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Potentiometric response of lipid modified ISFET
1Pharmaceutical Institute, Tohoku University, Sendai, Japan.
Applied Biochemistry and Biotechnology
|April 1, 1993
Abstract:
The gate surface of an ion-sensitive field effect transistor (ISFET) was modified with Langmuir-Blodgett (LB) film composed of fatty acid or crown ether amphiphiles to examine their potentiometric response to H+ and K+ ions. The results demonstrate the possible use of the lipid films for preparing ISFET ion sensors.