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Albert Chin

Showing results (1-10 of 29) with videos related to

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Chemosphere|November 26, 2023
Remarkably fast and reusable photocatalysis by UV annealed Cu<sub>2</sub>O-SnO<sub>2</sub> p-n heterojunctionPheiroijam Pooja, Albert Chin
Scientific Reports|April 27, 2017
Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation MaterialCheng Wei Shih, Albert Chin
ACS Applied Materials & Interfaces|July 26, 2016
New Material Transistor with Record-High Field-Effect Mobility among Wide-Band-Gap SemiconductorsCheng Wei Shih, Albert Chin
Nanomaterials (Basel, Switzerland)|January 6, 2021
Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel LayerTe Jui Yen, Albert Chin, Vladimir Gritsenko
Scientific Reports|February 11, 2017
A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory ArrayMohammed Zackriya, Harish M Kittur, Albert Chin
Nanomaterials (Basel, Switzerland)|February 13, 2025
Remarkably High Dielectric Constant and Capacitance Density by Ni/ZrO<sub>2</sub>/TiN Using Nanosecond Laser and Surface Plasma EffectWei Ting Fan, Pheiroijam Pooja, Albert Chin
Nanomaterials (Basel, Switzerland)|October 31, 2020
High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel LayerTe Jui Yen, Albert Chin, Vladimir Gritsenko
Nanomaterials (Basel, Switzerland)|June 27, 2023
Superior High Transistor's Effective Mobility of 325 cm<sup>2</sup>/V-s by 5 nm Quasi-Two-Dimensional SnON nFETPheiroijam Pooja, Chun Che Chien, Albert Chin
Scientific Reports|February 20, 2020
High Performance All Nonmetal SiN<sub>x</sub> Resistive Random Access Memory with Strong Process DependenceTe Jui Yen, Albert Chin, Vladimir Gritsenko
Nanomaterials (Basel, Switzerland)|June 2, 2021
Improved Device Distribution in High-Performance SiN<sub>x</sub> Resistive Random Access Memory via Arsenic Ion ImplantationTe-Jui Yen, Albert Chin, Vladimir Gritsenko
Pageof 3

Showing results (1-10 of 29) with videos related to

Sort By:
Pageof 3
Chemosphere|November 26, 2023
Remarkably fast and reusable photocatalysis by UV annealed Cu<sub>2</sub>O-SnO<sub>2</sub> p-n heterojunctionPheiroijam Pooja, Albert Chin
Scientific Reports|April 27, 2017
Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation MaterialCheng Wei Shih, Albert Chin
ACS Applied Materials & Interfaces|July 26, 2016
New Material Transistor with Record-High Field-Effect Mobility among Wide-Band-Gap SemiconductorsCheng Wei Shih, Albert Chin
Nanomaterials (Basel, Switzerland)|January 6, 2021
Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel LayerTe Jui Yen, Albert Chin, Vladimir Gritsenko
Scientific Reports|February 11, 2017
A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory ArrayMohammed Zackriya, Harish M Kittur, Albert Chin
Nanomaterials (Basel, Switzerland)|February 13, 2025
Remarkably High Dielectric Constant and Capacitance Density by Ni/ZrO<sub>2</sub>/TiN Using Nanosecond Laser and Surface Plasma EffectWei Ting Fan, Pheiroijam Pooja, Albert Chin
Nanomaterials (Basel, Switzerland)|October 31, 2020
High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel LayerTe Jui Yen, Albert Chin, Vladimir Gritsenko
Nanomaterials (Basel, Switzerland)|June 27, 2023
Superior High Transistor's Effective Mobility of 325 cm<sup>2</sup>/V-s by 5 nm Quasi-Two-Dimensional SnON nFETPheiroijam Pooja, Chun Che Chien, Albert Chin
Scientific Reports|February 20, 2020
High Performance All Nonmetal SiN<sub>x</sub> Resistive Random Access Memory with Strong Process DependenceTe Jui Yen, Albert Chin, Vladimir Gritsenko
Nanomaterials (Basel, Switzerland)|June 2, 2021
Improved Device Distribution in High-Performance SiN<sub>x</sub> Resistive Random Access Memory via Arsenic Ion ImplantationTe-Jui Yen, Albert Chin, Vladimir Gritsenko
Pageof 3