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Alberto Franceschetti

Showing results (1-10 of 11) with videos related to

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Physical Review Letters|June 4, 2008
Multiexciton absorption and multiple exciton generation in CdSe quantum dotsAlberto Franceschetti, Yong Zhang
Nano Letters|December 15, 2005
Temperature dependence of excitonic radiative decay in CdSe quantum dots: the role of surface hole trapsMarco Califano, Alberto Franceschetti, Alex Zunger
Nano Letters|July 9, 2009
Direct-bandgap InAs quantum-dots have long-range electron-hole exchange whereas indirect gap Si dots have short-range exchangeJun-Wei Luo, Alberto Franceschetti, Alex Zunger
ACS Nano|March 2, 2011
Size dependence of the multiple exciton generation rate in CdSe quantum dotsZhibin Lin, Alberto Franceschetti, Mark T Lusk
Nano Letters|August 30, 2008
Carrier multiplication in semiconductor nanocrystals: theoretical screening of candidate materials based on band-structure effectsJun-Wei Luo, Alberto Franceschetti, Alex Zunger
Physical Review Letters|August 9, 2003
Pseudopotential theory of Auger processes in CdSe quantum dotsLin-Wang Wang, Marco Califano, Alex Zunger, et al.
The Journal of Chemical Physics|May 2, 2008
Excited-state relaxation in PbSe quantum dotsJoonhee M An, Marco Califano, Alberto Franceschetti, et al.
ACS Nano|April 4, 2012
Efficient exciton transport between strongly quantum-confined silicon quantum dotsZhibin Lin, Huashan Li, Alberto Franceschetti, et al.
ACS Nano|August 21, 2012
The birth of a type-II nanostructure: carrier localization and optical properties of isoelectronically doped CdSe:Te nanocrystalsLijun Zhang, Zhibin Lin, Jun-Wei Luo, et al.
Physical Review Letters|August 7, 2007
Orbital-occupancy versus charge ordering and the strength of electron correlations in electron-doped CaMnO3Weidong Luo, Alberto Franceschetti, Maria Varela, et al.
Pageof 2

Showing results (1-10 of 11) with videos related to

Sort By:
Pageof 2
Physical Review Letters|June 4, 2008
Multiexciton absorption and multiple exciton generation in CdSe quantum dotsAlberto Franceschetti, Yong Zhang
Nano Letters|December 15, 2005
Temperature dependence of excitonic radiative decay in CdSe quantum dots: the role of surface hole trapsMarco Califano, Alberto Franceschetti, Alex Zunger
Nano Letters|July 9, 2009
Direct-bandgap InAs quantum-dots have long-range electron-hole exchange whereas indirect gap Si dots have short-range exchangeJun-Wei Luo, Alberto Franceschetti, Alex Zunger
ACS Nano|March 2, 2011
Size dependence of the multiple exciton generation rate in CdSe quantum dotsZhibin Lin, Alberto Franceschetti, Mark T Lusk
Nano Letters|August 30, 2008
Carrier multiplication in semiconductor nanocrystals: theoretical screening of candidate materials based on band-structure effectsJun-Wei Luo, Alberto Franceschetti, Alex Zunger
Physical Review Letters|August 9, 2003
Pseudopotential theory of Auger processes in CdSe quantum dotsLin-Wang Wang, Marco Califano, Alex Zunger, et al.
The Journal of Chemical Physics|May 2, 2008
Excited-state relaxation in PbSe quantum dotsJoonhee M An, Marco Califano, Alberto Franceschetti, et al.
ACS Nano|April 4, 2012
Efficient exciton transport between strongly quantum-confined silicon quantum dotsZhibin Lin, Huashan Li, Alberto Franceschetti, et al.
ACS Nano|August 21, 2012
The birth of a type-II nanostructure: carrier localization and optical properties of isoelectronically doped CdSe:Te nanocrystalsLijun Zhang, Zhibin Lin, Jun-Wei Luo, et al.
Physical Review Letters|August 7, 2007
Orbital-occupancy versus charge ordering and the strength of electron correlations in electron-doped CaMnO3Weidong Luo, Alberto Franceschetti, Maria Varela, et al.
Pageof 2