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Nano Letters
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July 9, 2009
Direct-bandgap InAs quantum-dots have long-range electron-hole exchange whereas indirect gap Si dots have short-range exchange
Jun-Wei Luo, Alberto Franceschetti, Alex Zunger
Physical Review Letters
|
April 2, 2019
Antidoping in Insulators and Semiconductors Having Intermediate Bands with Trapped Carriers
Qihang Liu, Gustavo M Dalpian, Alex Zunger
Physical Review Letters
|
February 1, 2008
Atomic control of conductivity versus ferromagnetism in wide-gap oxides via selective doping: V, Nb, Ta in anatase TiO2
Jorge Osorio-Guillén, Stephan Lany, Alex Zunger
Physical Review Letters
|
August 8, 2009
Electronic correlation in anion p orbitals impedes ferromagnetism due to cation vacancies in Zn chalcogenides
J A Chan, Stephan Lany, Alex Zunger
Physical Review Letters
|
May 23, 2006
Importance of second-order piezoelectric effects in zinc-blende semiconductors
Gabriel Bester, Xifan Wu, David Vanderbilt, et al.
Physical Review Letters
|
January 18, 2018
Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires
Jun-Wei Luo, Shu-Shen Li, Alex Zunger
Materials Horizons
|
December 14, 2021
Intrinsic doping limitations in inorganic lead halide perovskites
Fernando P Sabino, Alex Zunger, Gustavo M Dalpian
Nano Letters
|
December 2, 2014
Reinterpretation of the expected electronic density of states of semiconductor nanowires
Jianping Wang, Jun-Wei Luo, Lijun Zhang, et al.
Physical Review Letters
|
February 14, 2012
Genetic-algorithm discovery of a direct-gap and optically allowed superstructure from indirect-gap Si and Ge semiconductors
Mayeul d'Avezac, Jun-Wei Luo, Thomas Chanier, et al.
Physical Review Letters
|
November 10, 2015
Intrinsic Transparent Conductors without Doping
Xiuwen Zhang, Lijun Zhang, John D Perkins, et al.
Page
of 8
Search research articles
Search
Showing results (41-50 of 75) with videos related to
Sort By:
Page
of 8
Nano Letters
|
July 9, 2009
Direct-bandgap InAs quantum-dots have long-range electron-hole exchange whereas indirect gap Si dots have short-range exchange
Jun-Wei Luo, Alberto Franceschetti, Alex Zunger
Physical Review Letters
|
April 2, 2019
Antidoping in Insulators and Semiconductors Having Intermediate Bands with Trapped Carriers
Qihang Liu, Gustavo M Dalpian, Alex Zunger
Physical Review Letters
|
February 1, 2008
Atomic control of conductivity versus ferromagnetism in wide-gap oxides via selective doping: V, Nb, Ta in anatase TiO2
Jorge Osorio-Guillén, Stephan Lany, Alex Zunger
Physical Review Letters
|
August 8, 2009
Electronic correlation in anion p orbitals impedes ferromagnetism due to cation vacancies in Zn chalcogenides
J A Chan, Stephan Lany, Alex Zunger
Physical Review Letters
|
May 23, 2006
Importance of second-order piezoelectric effects in zinc-blende semiconductors
Gabriel Bester, Xifan Wu, David Vanderbilt, et al.
Physical Review Letters
|
January 18, 2018
Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires
Jun-Wei Luo, Shu-Shen Li, Alex Zunger
Materials Horizons
|
December 14, 2021
Intrinsic doping limitations in inorganic lead halide perovskites
Fernando P Sabino, Alex Zunger, Gustavo M Dalpian
Nano Letters
|
December 2, 2014
Reinterpretation of the expected electronic density of states of semiconductor nanowires
Jianping Wang, Jun-Wei Luo, Lijun Zhang, et al.
Physical Review Letters
|
February 14, 2012
Genetic-algorithm discovery of a direct-gap and optically allowed superstructure from indirect-gap Si and Ge semiconductors
Mayeul d'Avezac, Jun-Wei Luo, Thomas Chanier, et al.
Physical Review Letters
|
November 10, 2015
Intrinsic Transparent Conductors without Doping
Xiuwen Zhang, Lijun Zhang, John D Perkins, et al.
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of 8