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Angelica Azcatl

Showing results (1-10 of 20) with videos related to

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ACS Applied Materials & Interfaces|July 9, 2016
Remote Plasma Oxidation and Atomic Layer Etching of MoS2Hui Zhu, Xiaoye Qin, Lanxia Cheng, et al.
ACS Applied Materials & Interfaces|July 16, 2014
Atomic layer deposition of a high-k dielectric on MoS2 using trimethylaluminum and ozoneLanxia Cheng, Xiaoye Qin, Antonio T Lucero, et al.
ACS Nano|November 23, 2013
Realistic metal-graphene contact structuresCheng Gong, Stephen McDonnell, Xiaoye Qin, et al.
ACS Nano|May 7, 2014
Hole contacts on transition metal dichalcogenides: interface chemistry and band alignmentsStephen McDonnell, Angelica Azcatl, Rafik Addou, et al.
ACS Applied Materials & Interfaces|May 29, 2015
Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface StudyHui Zhu, Stephen McDonnell, Xiaoye Qin, et al.
ACS Applied Materials & Interfaces|October 17, 2017
Schottky Barrier Height of Pd/MoS<sub>2</sub> Contact by Large Area Photoemission SpectroscopyHong Dong, Cheng Gong, Rafik Addou, et al.
ACS Nano|October 15, 2013
HfO(2) on MoS(2) by atomic layer deposition: adsorption mechanisms and thickness scalabilityStephen McDonnell, Barry Brennan, Angelica Azcatl, et al.
ACS Applied Materials & Interfaces|January 29, 2016
Partially Fluorinated Graphene: Structural and Electrical CharacterizationLanxia Cheng, Srikar Jandhyala, Greg Mordi, et al.
Nano Letters|February 27, 2014
MoS₂ P-type transistors and diodes enabled by high work function MoOx contactsSteven Chuang, Corsin Battaglia, Angelica Azcatl, et al.
ACS Applied Materials & Interfaces|June 27, 2017
Probing Interface Defects in Top-Gated MoS<sub>2</sub> Transistors with Impedance SpectroscopyPeng Zhao, Angelica Azcatl, Yuri Y Gomeniuk, et al.
Pageof 2

Showing results (1-10 of 20) with videos related to

Sort By:
Pageof 2
ACS Applied Materials & Interfaces|July 9, 2016
Remote Plasma Oxidation and Atomic Layer Etching of MoS2Hui Zhu, Xiaoye Qin, Lanxia Cheng, et al.
ACS Applied Materials & Interfaces|July 16, 2014
Atomic layer deposition of a high-k dielectric on MoS2 using trimethylaluminum and ozoneLanxia Cheng, Xiaoye Qin, Antonio T Lucero, et al.
ACS Nano|November 23, 2013
Realistic metal-graphene contact structuresCheng Gong, Stephen McDonnell, Xiaoye Qin, et al.
ACS Nano|May 7, 2014
Hole contacts on transition metal dichalcogenides: interface chemistry and band alignmentsStephen McDonnell, Angelica Azcatl, Rafik Addou, et al.
ACS Applied Materials & Interfaces|May 29, 2015
Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface StudyHui Zhu, Stephen McDonnell, Xiaoye Qin, et al.
ACS Applied Materials & Interfaces|October 17, 2017
Schottky Barrier Height of Pd/MoS<sub>2</sub> Contact by Large Area Photoemission SpectroscopyHong Dong, Cheng Gong, Rafik Addou, et al.
ACS Nano|October 15, 2013
HfO(2) on MoS(2) by atomic layer deposition: adsorption mechanisms and thickness scalabilityStephen McDonnell, Barry Brennan, Angelica Azcatl, et al.
ACS Applied Materials & Interfaces|January 29, 2016
Partially Fluorinated Graphene: Structural and Electrical CharacterizationLanxia Cheng, Srikar Jandhyala, Greg Mordi, et al.
Nano Letters|February 27, 2014
MoS₂ P-type transistors and diodes enabled by high work function MoOx contactsSteven Chuang, Corsin Battaglia, Angelica Azcatl, et al.
ACS Applied Materials & Interfaces|June 27, 2017
Probing Interface Defects in Top-Gated MoS<sub>2</sub> Transistors with Impedance SpectroscopyPeng Zhao, Angelica Azcatl, Yuri Y Gomeniuk, et al.
Pageof 2