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Nanomaterials (Basel, Switzerland)|June 11, 2026
Polymer-Based Linear and Symmetric Artificial Synaptic Memristors for Accurate and Reliable Neuromorphic Computing ApplicationsAnshu Kumar, Tseung-Yuen TsengNanotechnology|May 8, 2009
Nanotip fabrication of zinc oxide nanorods and their enhanced field emission propertiesI-Chuan Yao, Pang Lin, Tseung-Yuen TsengNanoscale|August 8, 2024
Harnessing a WO<sub></sub>-based flexible transparent memristor synapse with a hafnium oxide layer for neuromorphic computingDebashis Panda, Yu-Fong Hui, Tseung-Yuen TsengNanoscale Research Letters|January 12, 2018
A Collective Study on Modeling and Simulation of Resistive Random Access MemoryDebashis Panda, Paritosh Piyush Sahu, Tseung Yuen TsengNanoscale Research Letters|November 7, 2022
CMOS-Compatible Memristor for Optoelectronic Neuromorphic ComputingFacai Wu, Chien-Hung Chou, Tseung-Yuen TsengScientific Reports|January 26, 2023
All oxide based flexible multi-folded invisible synapse as vision photo-receptorPing-Xing Chen, Debashis Panda, Tseung-Yuen TsengNanotechnology|January 20, 2018
Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusionDayanand Kumar, Rakesh Aluguri, Umesh Chand, et al.IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control|February 13, 2003
Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memoryHang-Ting Lue, Chien-Jang Wu, Tseung-Yuen TsengNanotechnology|November 22, 2018
Characteristics of flexible and transparent Eu<sub>2</sub>O<sub>3</sub> resistive switching memory at high bending conditionR Aluguri, R Sailesh, D Kumar, et al.Nanoscale Research Letters|August 20, 2016
Status and Prospects of ZnO-Based Resistive Switching Memory DevicesFirman Mangasa Simanjuntak, Debashis Panda, Kung-Hwa Wei, et al.Pageof 9