Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Atsushi Tsurumaki-Fukuchi

Showing results (1-10 of 6) with videos related to

Pageof 1
Sort By:
ACS Applied Materials & Interfaces|January 23, 2018
Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaO<sub>x</sub>Atsushi Tsurumaki-Fukuchi, Ryosuke Nakagawa, Masashi Arita, et al.
Scientific Reports|July 6, 2022
Double gate operation of metal nanodot array based single electron deviceTakayuki Gyakushi, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, et al.
ACS Applied Materials & Interfaces|March 23, 2023
Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching CharacteristicsAtsushi Tsurumaki-Fukuchi, Takayoshi Katase, Hiromichi Ohta, et al.
Scientific Reports|November 28, 2015
Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEMMasashi Arita, Akihito Takahashi, Yuuki Ohno, et al.
ACS Applied Materials & Interfaces|May 29, 2020
Stable and Tunable Current-Induced Phase Transition in Epitaxial Thin Films of Ca<sub>2</sub>RuO<sub>4</sub>Atsushi Tsurumaki-Fukuchi, Keiji Tsubaki, Takayoshi Katase, et al.
Nanoscale|July 27, 2016
Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cyclesMasashi Arita, Yuuki Ohno, Yosuke Murakami, et al.
Pageof 1

Showing results (1-10 of 6) with videos related to

Sort By:
Pageof 1
ACS Applied Materials & Interfaces|January 23, 2018
Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaO<sub>x</sub>Atsushi Tsurumaki-Fukuchi, Ryosuke Nakagawa, Masashi Arita, et al.
Scientific Reports|July 6, 2022
Double gate operation of metal nanodot array based single electron deviceTakayuki Gyakushi, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, et al.
ACS Applied Materials & Interfaces|March 23, 2023
Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching CharacteristicsAtsushi Tsurumaki-Fukuchi, Takayoshi Katase, Hiromichi Ohta, et al.
Scientific Reports|November 28, 2015
Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEMMasashi Arita, Akihito Takahashi, Yuuki Ohno, et al.
ACS Applied Materials & Interfaces|May 29, 2020
Stable and Tunable Current-Induced Phase Transition in Epitaxial Thin Films of Ca<sub>2</sub>RuO<sub>4</sub>Atsushi Tsurumaki-Fukuchi, Keiji Tsubaki, Takayoshi Katase, et al.
Nanoscale|July 27, 2016
Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cyclesMasashi Arita, Yuuki Ohno, Yosuke Murakami, et al.
Pageof 1